Clay behaviour in suspension is related to the
ionicity of clay-cation bonds.
Korek, "Electronic structure of the ZnCl molecule with rovibrational and
ionicity studies of the ZnX (X = F, Cl, Br, I) compounds," Computational and Theoretical Chemistry, vol.
In addition, from XPS results, the degree of
ionicity of Nb [d.sub.5/2]-orbital was found a chemical shift of 1.3 eV, and for O 1sorbital were found two chemical shifts at 4.7 eV and 2.2 eV, which are attributed to the appearance of [Nb.sup.4+] and oxygen vacancies due to the RHT in [La.sub.0.05][Li.sub.0.85]Nb[O.sub.3] when compared to LiNb[O.sub.3], respectively.
Given that CROSS is based on
ionicity of the involved cations, it would appear appropriate that coefficients of dispersibility could be used to further inform clay colloidal behaviour in a soil system and derive an equation on this basis.
Contrast was subdivided on the basis of
ionicity into ionic and nonionic; osmolarity into high osmolal contrast media (HOCM) and low osmolal contrast media (LOCM); structure into monomer and dimer.
Havenith, "Conceptual chemistry approach towards the support effect in supported vanadium oxides: valence bond calculations on the
ionicity of vanadium catalysts," Catalysis Today, vol.
In recent years, various experimental and theoretical works have been done to generalize the trends in the
ionicity ([f.sub.i]) and refractive index (n) of ternary chalcopyrite structures [A.sup.I][B.sup.III][C.sub.2.sup.VI] and AIIBIVC2V (Gorai and Mahata, 2010; Kumar et al, 1994; Neumann, 1987, 1985).
Topics of invited papers include the tight distribution of dielectric characteristics of HfSiON in metal gate devices, dynamical properties of orthorhombic phases of Group IVb transition metal oxides, interface characterization in nanoelectronics, theoretical studies on Fermi level pining of Hf-based high-k gate stacks based on thermodynamics, the role of
ionicity in defect formation in Hf-based dielectrics, challenges in gate stack etching and cleaning, crystalline rare-earth oxides as high-k materials for future CMOS technologies, high-k characterization by RFCV, uses for germanium, and the essence of VFB shifts in high-k gate stacks.